TFT 背板技術應用於Micro LED 顯示
Hyo‐Min Kim
Research Professor at Department of Information Display / Kyung Hee University
The advantages like high efficiency, high brightness, long lifetime, wide color gamut and narrow emission peak and scalability make μ-LED technology one of the promising candidate for future flat panel displays. However, μ-LEDs based on silicon technologies are usually with high cost and limited to small size applications. On the other hand, LTPS TFT backplane can support high current driving with excellent stability, but the cost is still high and there is limit in glass size up to G6. On the other hand, oxide semiconductor TFT is more appropriate for large-area displays. The oxide TFTs can be used for μ-LED because of its advantages such as relatively high mobility over 10 cm2 V−1 s−1, low threshold voltage near 0 V, and extremely low leakage current. And the manufacturing cost can be very low compared to Si backplane. In this talk, I will address the issues on oxide TFT and LTPS TFT for active-matrix backplane μ-LED displays. In addition, I will explain our works on digital driving and QD PR technologies which were presented at SID 2019 Display Week in San Jose.